Deep level defects in n-type GaN grown by molecular beam epitaxy

Deep Level States in P-type GaN Grown by Ammonia-based Molecular Beam Epitaxy and Metal Organic Chemical Vapor Deposition

Deep centers in n-GaN grown by reactive molecular beam epitaxy

Low defect-mediated reverse-bias leakage in „0001... GaN via high-temperature molecular beam epitaxy

Conductive atomic force microscopy, scanning electron microscopy, and x-ray diffraction were used to determine the effects of Ga/N flux ratio on the conductivity of current leakage paths in GaN grown by molecular beam epitaxy. Our data reveal a band of fluxes near Ga /N 1 for which these pathways ceased to be observable. We conclude that changes in surface defects surrounding or impurities alon...

Reduction of threading defects in GaN grown on vicinal SiC„0001... by molecular-beam epitaxy

CHARACTERIZATION OF NATIVE VACANCIES IN EPITAXIAL GaN AND ZnSe SEMI- CONDUCTOR LAYERS BY POSITRON ANNIHILATION SPECTROSCOPY

Point defects in epitaxial GaN and ZnSe semiconductor layers have been studied using a low-energy positron beam. Ga vacancies are found to be present in n-type GaN grown by metal organic chemical vapor deposition, where the conductivity is due to residual oxygen. When n-type silicon impurity doping is done, clearly less vacancies are observed. In Mgdoped p-type and semi-insulating materials the...